schottky barrier diodes (sbd) publication date: january 2005 skh 00143 aed 1 MA3S781F silicon epitaxial planar type for high speed switching circuits ? features ? f e a t u r e s ? ? optimum for high-density mounting ? o p t i m u m f o r h i g h - d e n s i t y m o u n t i n g ? ? short reverse recovery time t ? s h o r t r e v e r s e r e c o v e r y t i m e t ? rr short reverse recovery time t r r short reverse recovery time t , optimum for high-frequency recti? cation rr , o p t i m u m f o r h i g h - f r e q u e n c y r e c t i ? c a t i o n rr ? absolute maximum ratings ? a b s o l u t e m a x i m u m r a t i n g s ? t a = 25 a = 2 5 a c parameter symbol rating unit reverse voltage v r 30 v maximum peak reverse voltage v rm v r m v 30 v forward current single i f 30 ma series 20 peak forward current single i fm 150 ma series 110 junction temperature t j t j t 125 c storage temperature t stg t s t g t C 55 to + 125 c ? electrical characteristics ? e l e c t r i c a l c h a r a c t e r i s t i c s ? t a = 25 a = 2 5 a c 3 c parameter symbol conditions min typ max unit forward voltage v f 1 v f 1 v i f = 1 ma 0 . 4 v v f 2 v f 2 v i f = 30 ma 1 . 0 reverse current i r v r = 30 v r = 3 0 v r 300 na terminal capacitance c t v r = 1 v, f = 1 mhz r = 1 v , f = 1 m h z r 1 . 5 pf reverse recovery time * t rr t r r t i f = i r = 10 ma, i r = 1 0 m a , i r rr = 1 ma rr = 1 m a rr r l r l r = 100 l = 1 0 0 l ? 1 . 0 ns detection ef? ciency v in = 3 v in = 3 v in (peak) , f = 30 mhz r l r l r = 3 . 9 k l = 3 . 9 k l ? = 3 . 9 k ? = 3 . 9 k , c l = 10 pf l = 1 0 p f l 65 % note) 1 . measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2 . absolute frequency of input and output is 2 000 mhz 2 . this product is sensitive to electric shock (static electricity, etc.). due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. * : t rr measurement circuit rr measurement circuit rr bias application unit (n-50bu) 90% pulse generator (pg-10n) r s = 50 ? wa ve form analyzer (sas-8130) r i = 50 ? t p t p t = 2 s t r = 0.35 ns = 0.05 i f = i r = 10 ma r l = 100 ? 10% input pulse output pulse i rr = 1 ma t r t p t p t t rr v r i f t t a a marking symbol: m 1 u internal connection unit: mm 1: anode 1 2: cathode 2 3: cathode 1 anode 2 eiaj : sc-81 ssmini3-f2 package 0.28 0.05 3 1 2 0.28 0.05 (0.80 ) 1.60 +0.05 C0.03 0.1 2 +0.0 5 C0.0 2 0.6 0 +0.0 5 C0.0 3 (0.80 ) (0.51) (0.51 ) 0 to 0.1 (0.15 ) 3 (0.44) (0.44) 0.88 (0.375) +0.0 5 C0.0 3 0.80 0.05 (0.80 ) 1.60 0.05 3 1 3 2
ma 3 s 781 f 2 skh 00143 aed i f ? v ? v ? f v f v i r ? v ? v ? r v r v r f v f v ? t ? t ? a t a t i r ? t ? t ? a t a t c a c a t ? v ? v ? r v r v i r i r f(surge) ? t ? t ? w t w t 0 0.4 0.8 1.2 10 3 10 2 10 1 10 ? 1 10 ? 2 MA3S781F_ i f -v f forward current i f (ma) forward voltage v f (v) t a = 125 c 75 c 25 c ? 20 c 0 10 20 30 10 3 10 2 10 1 10 ? 1 10 ? 2 MA3S781F_ i r -v r reverse current i r ( a) reverse voltage v r (v ) t a = 125 c 75 c 25 c -40 40 120 200 1.6 1.2 0.8 0.4 0 MA3S781F_ v f - t a forward voltage v f (v) ambient temperature t a ( c) i f = 30 ma 3 ma 1 ma ? 40 40 120 200 10 3 10 2 10 1 10 ? 1 10 ? 2 MA3S781F_ i r - t a reverse current i r ( a) ambient temperature t a ( c) v r = 30 v 10 v 1 v 0 10 20 30 3.0 2.0 1.0 0 MA3S781F_ c t -v r te rminal capacitance c t (pf) reverse voltage v r (v) 10 ? 1 1 10 3.0 2.0 1.0 0 MA3S781F_ i f(sur ge) - t w forward sur ge current i f(sur ge) (a) pulse width t w (ms) t w i f(su rg e) t a = 25 c
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